STB34N65M5 datasheet(3/22 Pages) STMICROELECTRONICS

部件名	STB34N65M5

功能描述	N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 22 page

DocID022853 Rev 3

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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Electrical ratings

22

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

28

A

ID

Drain current (continuous) at TC = 100 °C

17.7

A

IDM

(1)

Drain current (pulsed)

112

A

PTOT

Total dissipation at TC = 25 °C

190

W

dv/dt (1)

1.

ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

15

V/ns

dv/dt (2)

2.

VDS ≤ 480 V

MOSFET dv/dt ruggedness

50

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220,

I2PAK

TO-247

Rthj-case Thermal resistance junction-case max

0.66

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board.

30

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

7A

EAS

Single pulse avalanche energy (starting tj=25°C,

Id= IAR; Vdd=50)

510

mJ

类似零件编号 - STB34N65M5

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STB34N65M5	314Kb / 2P	isc N-Channel MOSFET Transistor

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