BC309A datasheet(2/5 Pages) CDIL

部件名	BC309A

功能描述	SILICON PLANAR EPITAXIAL TRANSISTORS

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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SILICON PLANAR EPITAXIAL TRANSISTORS

BC 307, A, B, C

BC 308, A, B, C

BC 309, A, B, C

TO-92

Plastic Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Emitter Breakdown

BVCEO

IC=2mA,IB=0

Voltage

BC307

45

V

BC308, BC309

25

V

Emitter Base Breakdown Voltage

BVEBO

IE=100uA, IC=0

5V

Collector Emitter Leakage Current

BC307

ICES

VCES =50V, VBE =0

15

nA

BC308, BC309

VCES =30V, VBE =0

15

nA

BC307

VCES =50V, VBE =0,

4

µA

TA =125

oC

BC308, BC309

VCES =30V, VBE =0,

4

µA

TA =125

oC

DC Current Gain

A

hFE

IC=10uA,VCE=5V

90

B

150

C

270

BC307, BC308, BC309

IC=2mA,VCE=5V

120

800

A

120

170

220

B

200

290

460

C

420

500

800

A

IC=2mA,VCE=5V*

120

B

180

C

300

Collector Emitter Saturation

VCE(sat) IC=10mA,IB=0.5mA

0.10

0.3

V

Voltage

IC=100mA,IB=5mA

0.25

V

Base Emitter Saturation Voltage

VBE(sat) IC=10mA,IB=0.5mA

0.7

V

IC=100mA,IB=5mA

1.0

V

Base Emitter On Voltage

VBE(on) IC=2mA,VCE=5V

0.55

0.62

0.7

V

Continental Device India Limited

Data Sheet

Page 2 of 5

类似零件编号 - BC309A

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	BC309A	69Kb / 5P	PNP EPITAXIAL SILICON TRANSISTOR

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