PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BCY70 , 71, 72

TO-18

Metal Can Package

General Purpose Industrial Applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BCY70 BCY71 BCY72

UNIT

Collector Emitter Voltage

40

45

25

V

Collector Base Voltage

50

45

30

V

Emitter Base Voltage

55

5

V

Collector Current Continuous

200

mA

Collector Current Peak

200

mA

Power Dissipation @Ta=25ºC

350

mW

Derate Above 25ºC

2

mW/ºC

Operating Storage and Junction

-65 to +200

ºC

Temperature Range

THERMAL RESISTANCE

Junction to Ambient

500

ºC/W

Junction to Case

150

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION

VALUE

BCY70 BCY71 BCY72

UNIT

Collector Emitter Breakdown Voltage

>40

>45

>25

V

Collector Base Breakdown Voltage

>50

>45

>30

V

Emitter Base Breakdown Voltage

>5

>5

>5

V

Collector Cut off Current

<10

<50

nA

<50

nA

<0.5

<2.0

µA

Tj = 100ºC

<2

µA

Tj = 100ºC

<500

<500

<500

nA

Collector Cut off Current

<20

nA

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company