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IRL2203NSTRLPBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRL2203NSTRLPBF
功能描述  Advanced Process Technology
Download  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRL2203NSTRLPBF 数据表(HTML) 2 Page - International Rectifier

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IRL2203NS/LPbF
2
www.irf.com
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12)
ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ
≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
7.0
–––
–––
10
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
73
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
25
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
–––
60
Qgs
Gate-to-Source Charge
–––
–––
14
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
33
RG
Gate Resistance
0.2
–––
3.0
td(on)
Turn-On Delay Time
–––
11
–––
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
23
–––
tf
Fall Time
–––
66
–––
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3290
–––
Coss
Output Capacitance
–––
1270
–––
Crss
Reverse Transfer Capacitance
–––
170
–––
EAS
Single Pulse Avalanche Energy
d
––– 1320 g 290 h
mJ
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min
Typ
Max Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
56
84
ns
Qrr
Reverse Recovery Charge
–––
110
170
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IAS = 60A, L = 0.16mH
VGS = 4.5V, See Fig. 6 and 13
integral reverse
p-n junction diode.
TJ = 25°C, IS = 60A, VGS = 0V f
TJ = 25°C, IF = 60A
VGS = 16V
VGS = -16V
MOSFET symbol
showing the
VDD = 15V
ID = 60A
RG = 1.8Ω
ID = 60A
VDS = 24V
Conditions
VGS = 4.5V, See Fig. 10
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
µA
VDS = 25V, ID = 60A f
VGS = 10V, ID = 60A f
VGS = 4.5V, ID = 48A f
–––
116
i
nA
nC
Nh
pF
–––
–––
400
Internal Drain Inductance
Internal Source Inductance
4.5
–––
7.5
–––
–––
LD
LS
–––
–––


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