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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Active Doubler

7.5-22.5/15.0-45.0 GHz

XX1000-QT

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 +18 dBm Output Power

 -20 dBc Fundamental Leakage

 3x3 mm QFN Package

 100% RF, DC and Output Power Testing

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s 7.5-22.5/15.0-45.0 GHz SMD

active doubler delivers + 18 dBm of output power.

The device combines an active doubler with an

output buffer amplifier that delivers constant power

over a range of input powers. The device has

excellent rejection of the fundamental and harmonic

products and requires a single positive bias supply.

This device uses M/A-COM Tech's 0.15 GaAs

pHEMT device model technology to ensure high

reliability and uniformity. The device comes in a low-

cost 3x3mm QFN Surface Mount Plastic Package

offering excellent RF and thermal properties and is

RoHS compliant. This device is well suited for Point-

to-Point Radio, Microwave, LMDS, SATCOM and

VSAT applications.

Ordering Information

Part Number

Package

XX1000-QT-0G00

bulk quantity

XX1000-QT-0G0T

tape and reel

XX1000-QT-EV1

evaluation module

Functional Block Diagram

Pin Configuration

Pin No.

Function

Pin No.

Function

3

RF In

13

VD2

5

VG1

15

VD1

6

VSS

2,4,9,11

Ground

7

1,8,12,14,

16

Not Connected

10

RF Out

Absolute Maximum Ratings

Parameter

Absolute Max.

Supply Voltage (Vd)

+6.0 VDC

Supply Voltage (Vss)

-6.0 VDC

Supply Current (Id)

300 mA

Supply Current (Iss)

60 mA

Gate Bias Voltage (Vg)

-0.4 VDC

Input Power (RF Pin)

+15.0 dBm

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

-55 °C to MTTF

Channel Temperature (Tch)

1. Channel temperature directly affects a device's MTTF. Chan-

nel temperature should be kept as low as possible to maximize

lifetime.

Top View

1. VG2 can be used for current regulating VD2 or VG2 can be set

to GND withVD2 self-biasing at approximately 140mA.