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XX1000-QT 数据表(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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XX1000-QT 数据表(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 9 page • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 Active Doubler 7.5-22.5/15.0-45.0 GHz XX1000-QT ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Rev. V1 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 7.5-22.5/15.0-45.0 GHz SMD active doubler delivers + 18 dBm of output power. The device combines an active doubler with an output buffer amplifier that delivers constant power over a range of input powers. The device has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This device uses M/A-COM Tech's 0.15 GaAs pHEMT device model technology to ensure high reliability and uniformity. The device comes in a low- cost 3x3mm QFN Surface Mount Plastic Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Point- to-Point Radio, Microwave, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XX1000-QT-0G00 bulk quantity XX1000-QT-0G0T tape and reel XX1000-QT-EV1 evaluation module Functional Block Diagram Pin Configuration Pin No. Function Pin No. Function 3 RF In 13 VD2 5 VG1 15 VD1 6 VSS 2,4,9,11 Ground 7 VG21 1,8,12,14, 16 Not Connected 10 RF Out Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Voltage (Vss) -6.0 VDC Supply Current (Id) 300 mA Supply Current (Iss) 60 mA Gate Bias Voltage (Vg) -0.4 VDC Input Power (RF Pin) +15.0 dBm Storage Temperature (Tstg) -65 °C to +165 °C Operating Temperature (Ta) -55 °C to MTTF Table1 Channel Temperature (Tch) MTTF Table1 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. Top View 1. VG2 can be used for current regulating VD2 or VG2 can be set to GND withVD2 self-biasing at approximately 140mA. |
类似零件编号 - XX1000-QT |
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类似说明 - XX1000-QT |
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