SI4447DY datasheet(3/6 Pages) VISHAY

部件名	SI4447DY

功能描述	P-Channel 40-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 6 page

Document Number: 73662

S09-0322-Rev. B, 02-Mar-09

www.vishay.com

3

Vishay Siliconix

Si4447DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.02

0.04

0.06

0.08

0.10

04

8

12

16

20

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

0

1

2

3

4

5

6

02

4

6

8

10

12

ID = 4.5 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 20 V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TJ = 150 °C

20

10

1

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

124

248

372

496

620

744

868

992

1116

1240

0

5

10

15

20

25

30

35

40

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 4.5 A

TJ - Junction Temperature (°C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

02

4

6

8

10

ID = 4.5 A

TA = 25 °C

TA = 125 °C

VGS - Gate-to-Source Voltage (V)

类似零件编号 - SI4447DY

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI4447DY-T1-E3	1,016Kb / 9P	P-Channel 40 V (D-S) MOSFET

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