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2N3055 数据表(PDF) 2 Page - Continental Device India Limited |
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2N3055 数据表(HTML) 2 Page - Continental Device India Limited |
2 / 4 page SILICON PLANAR POWER TRANSISTOR 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) Second Breakdown DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Second Breakdown Collector Current IS/b VCE=40V,t=1.0 s,Nonrepetitive 2.87 A with Base Forward Biased Dynamic Characteristics Current Gain - Bandwidth Product fT IC=0.5A, VCE=10V, f=1MHz 2.5 MHz Small Signal Current Gain hfe IC=1A, VCE=4V, f=1KHz 15 120 Small Signal Current Gain Cutoff fh fe IC=1A, VCE=4V, f=1KHz 10 KHz Frequency *Pulse Test: Pulse Width <300 µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 |
类似零件编号 - 2N3055 |
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类似说明 - 2N3055 |
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