MC-4R512FKK8K

Preliminary Data Sheet E0254N10 (Ver. 1.0)

10

RIMM Module Current Profile

IDD

RIMM module power conditions

Note1

MAX.

Unit

IDD1

One RDRAM device per channel in Read

balance in NAP mode

1469

mA

IDD2

One RDRAM device per channel in Read

balance in Standby mode

2670

mA

IDD3

One RDRAM device per channel in Read

balance in Active mode

3300

mA

IDD4

One RDRAM device per channel in Write,

balance in NAP mode

1589

mA

IDD5

One RDRAM device per channel in Write,

balance in Standby mode

2790

mA

IDD6

One RDRAM device per channel in Write,

balance in Active mode

3420

mA

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does

not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb

RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per

RDRAM device in Write.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA or

290mA for x18 ECC module for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL =

VREF

− 0.5V.