SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3

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Vishay General Semiconductor

Revision: 14-Aug-13

1

Document Number: 88969

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)



Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

Notes

 40 ms

PRIMARY CHARACTERISTICS

2.0 A

100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

55 A

3.0 μA

0.854 V

150 °C

Package

DO-214AC (SMA)

Diode variations

Single die

DO-214AC (SMA)

PARAMETER

SYMBOL

SA2B

SA2D

SA2G

SA2J

SA2K

SA2M

UNIT

Device marking code

2B

2D

2G

2J

2K

2M

Max. repetitive peak reverse voltage

100

200

400

600

800

1000

V

Average forward current

2.0

A

Peak forward surge current 10 ms single half



sine-wave superimposed on rated load

55

A

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage

0.911

-

V

0.954

1.1

0.805

-

0.854

0.95

Reverse current

0.19

3

μA

28

90

Typical reverse recovery time

1.5

-

μs

Typical junction capacitance

4.0 V, 1 MHz

11

-

pF