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SB170 数据表(PDF) 1 Page - EIC discrete Semiconductors |
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SB170 数据表(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page SB120 - SB1B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low cost MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SB 120 SB 130 SB 140 SB 150 SB 160 SB 170 SB 180 SB 190 SB 1B0 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 70 80 90 100 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 49 56 63 70 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 70 80 90 100 Volts Maximum Average Forward Current 0.375", 9.5mm Lead Length See Fig.1 IF(AV) 1.0 Amp. Peak Forward Surge Current, 8.3ms single half sine wave superimposed on rated load (JEDEC Method) IFSM 40 Amps. Maximum Forward Voltage at IF = 1.0 Amp. (Note 2) VF 0.5 0.7 0.79 Volt. Maximum Reverse Current at Ta = 25 °C IR 0.5 mA Rated DC Blocking Voltage (Note 1) Ta = 100 °C IR(H) 10.0 5.0 mA Typical Thermal Resistance (Note 2) R θJL 15 °C/W Junction Temperature Range TJ - 40 to + 125 - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : (1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%. (2) Thermal Resistance from junction to lead, PC board Mounting w ith 0.375" (9.5mm) Lead Lengths. UPDATE : SEPTEMBER 12, 1998 RATING DO - 41 0.205 (5.20) 0.160 (4.10) 0.107 (2.74) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
类似零件编号 - SB170 |
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类似说明 - SB170 |
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