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FDD7N60NZTM 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDD7N60NZTM 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2013 ©2011 Fairchild Semiconductor Corporation FDD7N60NZ / FDU7N60NZTU Rev. C1 www.fairchildsemi.com 1 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features •RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on- state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter appli- cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D S I-PAK D-PAK G S D G D S MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FDD7N60NZTM/ FDU7N60NZTU Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±25 V ID Drain Current - Continuous (TC = 25oC) 5.5 A - Continuous (TC = 100oC) 3.3 IDM Drain Current - Pulsed (Note 1) 22 A EAS Single Pulsed Avalanche Energy (Note 2) 347 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25oC) 90 W - Derate Above 25oC0.7 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD7N60NZTM/ FDU7N60NZTU Unit RθJC Thermal Resistance, Junction to Case, Max. 1.4 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 90 |
类似零件编号 - FDD7N60NZTM |
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类似说明 - FDD7N60NZTM |
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