SI7964DP datasheet(3/8 Pages) VISHAY

部件名	SI7964DP

功能描述	Dual N-Channel 60-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 8 page

Document Number: 73101

S09-0272-Rev. C, 16-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7964DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0

5

10

15

20

25

30

35

40

ID - Drain Current (A)

VGS = 10 V

0

2

4

6

8

10

0

1020304050

VDS = 30 V

ID = 9.6 A

Qg - Total Gate Charge (nC)

0.0

0.3

0.6

0.9

1.2

1.5

TJ = 150 °C

TJ = 25 °C

40

10

1

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

800

1600

2400

3200

4000

0

10203040506

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

Crss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 9.6 A

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

02468

10

VGS - Gate-to-Source Voltage (V)

ID = 9.6 A

类似零件编号 - SI7964DP

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7960DP	521Kb / 12P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI7960DP	348Kb / 13P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI7960DP-T1-E3	521Kb / 12P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI7960DP-T1-GE3	521Kb / 12P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09
	SI7960DP	348Kb / 13P	Dual N-Channel 60-V (D-S) MOSFET Rev. B, 09-Feb-09

More results

类似说明 - SI7964DP

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Vishay Siliconix	SI9945BDY	271Kb / 10P	Dual N-Channel 60-V (D-S) MOSFET Rev. A, 02-Mar-09
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VBsemi Electronics Co.,...	435YW	945Kb / 6P	Dual N-Channel 60 V (D-S) MOSFET
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Vishay Siliconix	SIS9634LDN	209Kb / 7P	Dual N-Channel 60-V (D-S) MOSFET Rev. A, 26-Sep-2022