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BC847CT 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BC847CT 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page BC847AT /BC847BT /BC847CT NPN Plastic Encapsulate Transistor Elektronische Bauelemente 06-Jan-2011 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified ) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage VCBO 50 - - V IC = 10 μA, IE = 0 Collector to Emitter Breakdown Voltage VCEO 45 - - V IC = 10 mA, IB = 0 Emitter to Base Breakdown Voltage VEBO 6 - - V IE = 1 μA, IC = 0 Collector Cutoff Current ICBO - - 15 nA VCB = 30 V Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC = 10mA, IB = 0.5 mA - - 0.6 IC = 100mA, IB = 5 mA Base to Emitter Saturation Voltage VBE(sat) - 0.7 - V IC = 10mA, IB = 0.5 mA - 0.9 - IC = 100mA, IB = 5 mA Base to Emitter Voltage VBE(on) 580 660 700 mV VCE = 5 V, IC = 2 mA - - 770 VCE = 5 V, IC = 10 mA DC Current Gain BC847AT hFE 110 - 220 VCE = 5 V, IC = 2 mA BC847BT 200 - 450 BC847CT 420 - 800 Transition Frequency fT 100 - - MHz VCE = 5 V, IC = 10 mA f = 100MHz Collector Output Capacitance COb - - 4.5 pF VCB = 10 V, f=1MHz Noise Figure BC847BT NF - - 10 dB VCE= 5V, BW= 200HZ, f= 1KHz, RS= 2 kΩ BC847CT - - 4 |
类似零件编号 - BC847CT |
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类似说明 - BC847CT |
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