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SB3150 数据表(PDF) 2 Page - Cystech Electonics Corp. |
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SB3150 数据表(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C771LD Issued Date : 2009.08.03 Revised Date : 2013.09.30 Page No. : 2/6 SB3150 and SB3200 CYStek Product Specification Maximum Ratings and Electrical Characteristics (Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%) Type Parameter Symbol SB3150 SB3200 Units Maximum repetitive peak reverse voltage VRRM 150 200 V Maximum RMS voltage VRMS 105 140 V Maximum DC blocking voltage VDC 150 200 V Maximum instantaneous forward voltage at 3A 1 VF 0.89 V Maximum average forward rectified current IF(AV) 3 A Peak forward surge current @8.3ms single half sine wave superimposed on rated load (JEDEC method) IFSM 80 A TA=25°C 0.5 Maximum DC reverse current at rated DC blocking voltage 1 TA=100°C IR 10 mA Typical junction capacitance CJ 250 pF Typical thermal resistance RθJA 20 ℃ /W Operating junction temperature range TJ -55 ~ +150 ℃ Storage temperature range TSTG -55 ~ +150 ℃ Note: 1.Pulse test: pulse width≤300μs, duty cycle≤2% |
类似零件编号 - SB3150 |
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类似说明 - SB3150 |
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