MTB04N03AQ8 datasheet(2/9 Pages) CYSTEKEC

部件名	MTB04N03AQ8

功能描述	N-Channel Logic Level Enhancement Mode Power MOSFET

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制造商	CYSTEKEC [Cystech Electonics Corp.]

网页	http://www.cystekec.com

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2 / 9 page

CYStech Electronics Corp.

Spec. No. : C889Q8

Issued Date : 2013.12.02

Revised Date :

Page No. : 2/9

MTB04N03AQ8

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current @ TC=25

°C, VGS=10V

20

Continuous Drain Current @ TC=100

°C, VGS=10V

ID

12.6

Continuous Drain Current @ TA=25

°C, VGS=10V

14

Continuous Drain Current @ TA=70

°C, VGS=10V

IDSM

11

Pulsed Drain Current

IDM

100

*1

Avalanche Current

IAS

20

A

Avalanche Energy @ L=2mH, ID=20A, VDD=25V

EAS

400 *2

mJ

TC=25℃

5

TC=100℃

PD

2

TA=25℃

2.5

*3

Total Power Dissipation

TA=70℃

PDSM

1.6

*3

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

25

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

50 *3

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board, 125

°C/W when mounted on minimum copper pad

Characteristics (TC=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

V

VGS=0, ID=250μA

VGS(th)

1.0

2.0

2.5

V

VDS = VGS, ID=250μA

GFS *1

-

37

-

S

VDS =5V, ID=18A

IGSS

-

±

100

nA

VGS=±20

-

1

VDS =30V, VGS =0

IDSS

-

25

μA

VDS =30V, VGS =0, Tj=125

°C

-

4.4

6

mΩ

VGS =10V, ID=18A

RDS(ON) *1

-

5.8

8

mΩ

VGS =4.5V, ID=12A

Dynamic

Ciss

-

2394

-

Coss

-

494

-

Crss

-

281

-

pF

VGS=0V, VDS=15V, f=1MHz

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MTB04N03AQ8 数据表(PDF) 2 Page - Cystech Electonics Corp.

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