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OP215D 数据表(PDF) 2 Page - OPTEK Technologies |
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OP215D 数据表(HTML) 2 Page - OPTEK Technologies |
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2 / 3 page  OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A 06/08 Page 2 of 3 Hermetic Infrared Emitting Diode OP215, OP216 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -65o C to +150o C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Peak Forward Current (2µs pulse with 0.1% duty cycle) 1.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2) Power Dissipation 150 mW(3) Operating Temperature Range -65o C to +125o C Notes: 1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices. 2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1.50 mW/° C above 25° C. 4. For OP216, EE(APT) is a measurement using a 0.180” (4.57 mm) diameter apertured sensor placed 0.653” (16.59 mm) from the lens tip. EE(APT) is not necessarily uniform within the measured area. Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode EE (APT) (3) Apertured Radiant Incidence OP216A OP216B OP216C OP216D 1.20 0.60 0.30 0.20 - - mW/cm2 IF = 50 mA (4) VF Forward Voltage - - 1.80 V IF = 50 mA IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 10 mA B Spectral Bandwidth between Half Power Points - 80 - nm IF = 10 mA ∆λP /∆T Spectral Shift with Temperature - +0.18 - nm/°C IF = Constant θHP Emission Angle at Half Power Points - 24 - Degree IF = 50 mA tr Output Rise Time - 500 - ns tf Output Fall Time - 250 - ns IF(PK)=100 mA, PW=10 µs, and D.C.=10.0% |
类似零件编号 - OP215D |
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类似说明 - OP215D |
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