October 2013

FQD13N06L / FQU13N06L

60 V, 11 A, 115 mΩ

Description

©2000 Fairchild Semiconductor Corporation

FQD13N06L / FQU13N06L Rev. C3

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D

Thermal Characteristics

Symbol

Parameter

FQD13N06LTM

FQU13N06LTU

FQU13N06LTU_WS

Unit

Thermal Resistance, Junction to Case, Max.

4.5

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

50

• Low Gate Charge (Typ. 4.8 nC)

• Low Crss (Typ. 17 pF)

• 100% Avalanche Tested

• Low Level Gate Drive Requirements Allowing

Direct Operation form Logic Drivers

Symbol

Parameter

FQD13N06LTM / FQU13N06LTU

FQU13N06LTU_WS

Unit

Drain-Source Voltage

60

V

Drain Current

11

A

A

7

Drain Current

- Pulsed

(Note 1)

44

A

Gate-Source Voltage

±

20

V

Single Pulsed Avalanche Energy

(Note 2)

90

mJ

Avalanche Current

(Note 1)

11

A

Repetitive Avalanche Energy

(Note 1)

2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

2.5

W

28

W

- Derate above 25°C

0.22

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds

300

°C