STF8NM60ND datasheet(3/17 Pages) STMICROELECTRONICS

部件名	STF8NM60ND

功能描述	N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STx8NM60ND

Electrical ratings

3/17

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

DPAK

IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at

TC = 25 °C

77 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at

TC = 100 °C

4.4

4.4 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

28

28 (1)

A

PTOT

Total dissipation at TC = 25 °C

70

25

W

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t = 1 s;TC = 25 °C)

2500

V

dv/dt (3)

3.

ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

40

V/ns

Tstg

Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

DPAK

IPAK

TO-220FP

Rthj-case Thermal resistance junction-case

1.79

5

°C/W

Rthj-amb Thermal resistance junction-amb

62.5

100

62.5

°C/W

Rthj-pcb Thermal resistance junction-pcb

50

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

2.5

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

200

mJ

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