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STF8NM60ND 数据表(PDF) 1 Page - STMicroelectronics |
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STF8NM60ND 数据表(HTML) 1 Page - STMicroelectronics |
1 / 17 page February 2009 Rev 1 1/17 17 STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Figure 1. Internal schematic diagram Type VDSS (@Tjmax) RDS(on) max ID STD8NM60ND 650 V < 0.70 Ω 7 A STF8NM60ND 650 V < 0.70 Ω 7 A STP8NM60ND 650 V < 0.70 Ω 7 A(1) 1. Limited only by maximum temperature allowed STU8NM60ND 650 V < 0.70 Ω 7 A TO-220 DPAK IPAK 1 2 3 3 2 1 1 3 1 2 3 TO-220FP Table 1. Device summary Order codes Marking Package Packaging STD8NM60ND 8NM60ND DPAK Tape and reel STF8NM60ND 8NM60ND TO-220FP Tube STP8NM60ND 8NM60ND TO-220 Tube STU8NM60ND 8NM60ND IPAK Tube www.st.com |
类似零件编号 - STF8NM60ND |
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类似说明 - STF8NM60ND |
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