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BTA06G-8-C-TF3-T 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BTA06G-8-C-TF3-T
功能描述  6A TRIACS
Download  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BTA06G-8-C-TF3-T 数据表(HTML) 2 Page - Unisonic Technologies

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BTA06
Preliminary
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-033.d
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
RMS On-State Current (Full Sine Wave)
TC=105°C
IT(RMS)
6
A
Non Repetitive Surge Peak On-State
Current (Full Cycle TJ initial=25°C)
F=50Hz
t=20ms
ITSM
60
A
F=60Hz
t=16.7ms
63
A
I
2t Value for Fusing
tP=10ms
I
2t
21
A
2s
Critical Rate of Rise of On-State Current:
IG=2xIGT, tr≤100ns
F=120Hz TJ=125°C
dI/dt
50
A/µs
Peak Gate Current
tP=20µs
TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case (AC)
θJC
2.7
°C/W
ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified)
FOR STANDARD (4 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
C
B
UNIT
MIN TYP
MAX MIN TYP MAX
Gate Trigger Current
(Note 1)
IGT
VD=12V, RL=30Ω
I-II-III
25
50
mA
IV
50
100
mA
Gate Trigger Voltage
VGT
ALL
1.3
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=125°C
ALL
0.2
0.2
V
Holding Current (Note 2)
IH
IT=500mA
25
50
mA
Latching Current
IL
IG=1.2IGT
I-III-IV
40
50
mA
II
80
100
mA
Critical Rate of Rise of
Off-State Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate Open,
TJ=125°C
200
400
V/µs
Critical Rate of Rise of
Off-State Voltage at
Commutation (Note 2)
(dV/dt)c
(dI/dt)c=2.7A/ms, TJ= 125°C
5
10
V/µs
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Peak On-State Voltage (Note 2)
VTM
ITM=8.5A, tP=380μs
TJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
60
mΩ
Repetitive Peak Off-State Current
IDRM
VDRM=VRRM
TJ=25°C
5
μA
IRRM
TJ=125°C
1
mA
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.


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