UFZ24N

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-901.B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

55

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

17

A

12

A

Pulsed (Note 1)

68

A

Avalanche Current (Note 1)

10

A

Avalanche Energy

Single Pulsed (Note 2)

71

mJ

Repetitive (Note 1)

4.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

5.0

V/ns

Power Dissipation

TO-220

73

W

TO-251/TO-252

46

W

Linear Derating Factor

0.30

W/°C

Junction Temperature

-55~+175

°C

Storage Temperature Range

-55~+175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-251/TO-252

100

°C/W

Junction to Case

TO-220

1.71

°C/W

TO-251/TO-252

2.7

°C/W

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.