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IRF1010 数据表(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF1010 数据表(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Typical capacitance vs. Drain-to-Source voltage Drain-to-Source voltage, V (V) DS Total gate charge, Q (nC) G Fig.8 Maximum safe operating area Drain-to-Source voltage, V (V) DS Junction temperature, T (°C) J Fig.7 Typical Source-Drain diode forward voltage Source-to-Drain voltage, V (V) SD Fig.6 Typical gate charge vs. Gate-to-Source voltage Fig.9 Normalized on-resistance vs. temperature 10 1000 IRF1010 Series 100000 10000 1000 0 1 10 100 0 0.2 0.4 1 1.2 100 1 0.1 100 1000 10 1 0.1 1 10 100 2.5 2 1.5 1 0.5 -20 0 -60 -40 20 40 60 80 100 0 2 4 6 8 10 12 0 20 40 60 30 10 50 www.nellsemi.com Page 4 of 7 Coss Crss Ciss C = ( ) iss C +C C = shorted gs gd ds C = C rss gd C = C +C oss ds gd V = 0V, GS f =1MHZ V = 48V DS V = 30V DS V = 12V DS l = 51A D T = 25 °C J V = 0V GS T = 17 5°C J 0.8 0.6 1.4 2 1.6 1.8 Note: 1. T 2. T = 25°C C = 175°C J 3. Single Pulse 1ms 10ms 100µs Operation in This Area is Limited by RDS(ON) 10000 l =84A D V =10V GS 120 140 160 180 |
类似零件编号 - IRF1010 |
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类似说明 - IRF1010 |
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