IRF830 datasheet(5/7 Pages) NELLSEMI

部件名	IRF830

功能描述	N-Channel Power MOSFET

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制造商	NELLSEMI [Nell Semiconductor Co., Ltd]

网页	http://www.nellsemi.com

标志

5 / 7 page

SEMICONDUCTOR

Nell High Power Products

RoHS

Fig.12a. Unclamped lnductive test circuit

Rectangular Pulse Duration , t1 (seconds)

Fig.11b. Switching time waveforms

Fig.12b. Unclamped lnductive waveforms

Fig.10 Maximum effective transient thermal impedance,

Junction-to-Case

IRF830 Series

VDS

VGS

90%

10%

td(ON)

tR

td(OFF)

tF

Fig.11a. Switching time test circuit

+

-

RD

VDS

VGS

RG

10V

Pulse width ≤ 1µs

Duty Factor ≤ 0.1%

D.U.T.

VDD

1

0.1

10

A

+

- VDD

D.U.T.

VDS

RG

10V

tP

lAS

0.01Ω

L

1

10

0.1

-

10 ²

-

10 ³

-

10 ⁴

₅

-

10

-

10 ²

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Vary t to obtain required I

p

AS

Single pulse

(Thermal response)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

t1

t2

Notes:

1. Duty factor, D = t / t

1

2

2. Peak T = P

*

R

+

J

DM

th(j-c)

TC

VDD

tp

Time

lAS

BVDSS

lD(t)

VDS(t)

类似零件编号 - IRF830

制造商	部件名	数据表	功能描述
NXP Semiconductors	IRF830	58Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
Inchange Semiconductor ...	IRF830	128Kb / 1P	N-channel mosfet transistor
List of Unclassifed Man...	IRF830	2Mb / 31P	SEMICONDUCTORS
STMicroelectronics	IRF830	92Kb / 8P	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Comset Semiconductor	IRF830	109Kb / 3P	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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类似说明 - IRF830

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