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IRF630 数据表(PDF) 2 Page - Nell Semiconductor Co., Ltd

部件名 IRF630
功能描述  N-Channel Power MOSFET
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制造商  NELLSEMI [Nell Semiconductor Co., Ltd]
网页  http://www.nellsemi.com
标志 NELLSEMI - Nell Semiconductor Co., Ltd

IRF630 数据表(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
UNIT
Min.
1.7
0.5
THERMAL RESISTANCE
PARAMETER
Thermal resistance, case to heatsink
Thermal resistance, junction to case
SYMBOL
Rth(j-c)
Rth(c-s)
Typ.
Max.
ºC/W
62.5
IRF630 Series
Thermal resistance, junction to ambient
Rth(j-a)
UNIT
V
ns
μA
pF
nC
20
Max.
3.8
250
200
0.35
-100
100
0.24
800
80
9.5
28
39
240
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
V
= 0V, I = 250µA
GS
D
TEST CONDITIONS
I = 1mA, referenced to 25°C
D
V
=200V, V
=0V
DS
GS
T = 25°C
C
Fall time
Gate to source reverse leakage current
Input capacitance
Total gate charge
Output capacitance
PARAMETER
Rise time
Gate to source forward leakage current
Turn-on delay time
Reverse transfer capacitance
Breakdown voltage temperature coefficient
Drain to source breakdown voltage
Turn-off delay time
SYMBOL
CISS
V
/
(BR)DSS
TJ
V(BR)DSS
IGSS
QG
tr
tf
QGS
7
Gate to source charge
V
= 160V, V
= 10V, I = 5.9A
DS
GS
D
Drain to source leakage current
IDSS
COSS
CRSS
td(ON)
td(OFF)
V/ºC
Ω
S
nA
T =125°C
C
Typ.
Min.
0.4
25
43
V
= 100V,
DD
(Note 1)
I = 5.9A,R = 12Ω,
D
G
V
= 10V, R =16Ω
GS
D
V
= 25V, V
= 0V, f =1MHz
DS
GS
V
= -20V, V
= 0V
GS
DS
V
= 20V, V
= 0V
GS
DS
V
=50V, I =5.4A
DS
D
Forward transconductance
Static drain to source on-state resistance
RDS(ON)
gfS
V
= 10V, l = 5.4A (Note 1)
GS
D
Gate to drain charge (Miller charge)
QGD
23
V
=160V, V
=0V
DS
GS
2
V
4
V
=V
, I =250μA
GS
DS
D
Gate threshold voltage
VGS(TH)
nH
7.5
4.5
Internal source inductance
LS
Internal drain inductance
LD
Between lead, 6mm from
package and center of die
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)
C
UNIT
Max.
TEST CONDITIONS
PARAMETER
SYMBOL
Typ.
Min.
V
I
= 9A, V
= 0V
SD
GS
Diode forward voltage
VSD
2
Integral reverse P-N junction
diode in the MOSFET
Continuous source to drain current
Is(I )
SD
9
D (Drain)
G
(Gate)
S (Source)
A
Pulsed source current
ISM
36
I
= 5.9A, V
= 0V,
SD
GS
dI /dt = 100A/µs
F
Reverse recovery time
trr
ns
170
μC
Reverse recovery charge
Qrr
1.5
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%
.
tON
Forward turn-on time
350
2.2
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
www.nellsemi.com
Page 2 of 7


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