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IRF630 数据表(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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IRF630 数据表(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 7 page SEMICONDUCTOR RoHS RoHS Nell High Power Products UNIT Min. 1.7 0.5 THERMAL RESISTANCE PARAMETER Thermal resistance, case to heatsink Thermal resistance, junction to case SYMBOL Rth(j-c) Rth(c-s) Typ. Max. ºC/W 62.5 IRF630 Series Thermal resistance, junction to ambient Rth(j-a) UNIT V ns μA pF nC 20 Max. 3.8 250 200 0.35 -100 100 0.24 800 80 9.5 28 39 240 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C V = 0V, I = 250µA GS D TEST CONDITIONS I = 1mA, referenced to 25°C D V =200V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲ V / (BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 7 Gate to source charge V = 160V, V = 10V, I = 5.9A DS GS D Drain to source leakage current IDSS COSS CRSS td(ON) td(OFF) V/ºC Ω S nA T =125°C C Typ. Min. 0.4 25 43 V = 100V, DD (Note 1) I = 5.9A,R = 12Ω, D G V = 10V, R =16Ω GS D V = 25V, V = 0V, f =1MHz DS GS V = -20V, V = 0V GS DS V = 20V, V = 0V GS DS V =50V, I =5.4A DS D Forward transconductance Static drain to source on-state resistance RDS(ON) gfS V = 10V, l = 5.4A (Note 1) GS D Gate to drain charge (Miller charge) QGD 23 V =160V, V =0V DS GS 2 V 4 V =V , I =250μA GS DS D Gate threshold voltage VGS(TH) nH 7.5 4.5 Internal source inductance LS Internal drain inductance LD Between lead, 6mm from package and center of die SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified) C UNIT Max. TEST CONDITIONS PARAMETER SYMBOL Typ. Min. V I = 9A, V = 0V SD GS Diode forward voltage VSD 2 Integral reverse P-N junction diode in the MOSFET Continuous source to drain current Is(I ) SD 9 D (Drain) G (Gate) S (Source) A Pulsed source current ISM 36 I = 5.9A, V = 0V, SD GS dI /dt = 100A/µs F Reverse recovery time trr ns 170 μC Reverse recovery charge Qrr 1.5 Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% . tON Forward turn-on time 350 2.2 Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD) www.nellsemi.com Page 2 of 7 |
类似零件编号 - IRF630 |
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类似说明 - IRF630 |
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