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BTA1640T3 数据表(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1640T3 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C657T3 Issued Date : 2011.02.23 Revised Date :2012.06.14 Page No. : 1/5 BTA1640T3 CYStek Product Specification PNP Epitaxial Planar Power Transistor BVCEO -30V IC -7A RCESAT 70mΩ(typ.) BTA1640T3 Features • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. • Excellent current gain linearity. • RoHS compliant package. Symbol Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -18 V Collector Current (DC) IC -7 Collector Current (Pulse) ICP -10 (Note 1) A Power Dissipation @ TA=25℃ PD 1 Power Dissipation @ TC=25℃ PD 20 W Thermal Resistance, Junction to Ambient RθJA 125 °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380μs, Duty≦2%. BTA1640T3 TO-126 E C B B:Base C:Collector E:Emitter |
类似零件编号 - BTA1640T3 |
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类似说明 - BTA1640T3 |
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