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2SA1013L-P-T92-K 数据表(PDF) 2 Page - Unisonic Technologies |
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2SA1013L-P-T92-K 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R208-049.B ABSOLUTE MAXIMUM RATINGS (T A=25 °C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Base Current IB -0.5 A Collector Power Dissipation SOT-89 PC 500 W TO-92/TO-92NL 900 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=-150V, IE=0 -1.0 µA Emitter Cut-Off Current IEBO VEB=-6V, IC=0 -1.0 µA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 V DC Current Gain hFE VCE=-5V, IC=-200mA 60 320 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA -1.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-5mA -0.45 -0.75 V Transition Frequency fT VCE=-5V, IC=-200mA 15 50 MHz Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 35 pF CLASSIFICATION OF hFE RANK R O P RANGE 60~120 100~200 160~320 |
类似零件编号 - 2SA1013L-P-T92-K |
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类似说明 - 2SA1013L-P-T92-K |
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