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2N4200 数据表(PDF) 1 Page - Digitron Semiconductors |
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2N4200 数据表(HTML) 1 Page - Digitron Semiconductors |
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1 / 6 page  DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N4199 – 2N4204 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak Reverse Blocking Voltage, Note 1 (TJ = 105°C) VRRM 50 Volts Peak Forward Blocking Voltage, Note 1 (TC = 105°C) 2N4199 2N4200 2N4201 2N4202 2N4203 2N4204 VDRM 300 400 500 600 700 800 Volts Repetitive Peak On-State Current (PW = 3 µs, Duty Cycle = 0.6%, TC = 85°C) ITRM 100 Amps Continuous On-State Current (TC = 65°C) IT 5 Amps Current Application Rate, Note 2 di/dt 5000 A/µs Peak Forward Gate Power PGFM 20 Watt Average Forward Gate Power PGF(AV) 1 Watt Peak Forward Gate Current IGFM 5 Amps Peak Gate Voltage – Forward Reverse, Note 3 VGFM VGRM 10 10 Volts Operating Junction Temperature Range Blocking State Conducting State TJ -65 to +105 -65 to +200 °C Storage Temperature Range Tstg -65 to +200 °C Stud Torque - 15 In. lb. Thermal resistance, junction to case R ӨJC 3 °C/W Note 1: Characterized for unilateral applications where reverse blocking capability is not important. VDRM and VRRM may be applied as a continuous dc voltage for zero or negative gate voltage but positive gate voltage must not be applied concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied voltage to exceed the rated voltage. Note 2: Minimum Gate Trigger Pulse: IG = 200 mA, PW = 1 µs, tr = 20 ns. Note 3: Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit Peak Forward or Reverse Blocking Current (Rated VDRM or VRRM, gate open) TC = 105°C) IDRM, IRRM - 2 mA Gate Trigger Current (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) IGT - - 50 100 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = rated VDRM, RL = 100 ohms, TC = 105°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) VGT 0.2 - - - 1.5 2 Volts Holding Current (Anode Voltage = 7 Vdc, gate open, TC = 105°C) IH 3 - mA Forward “on” Voltage (ITM = 5 Adc, PW = 1 ms max, Duty Cycle ≤ 1%) VTM 2.6 - Volts Dynamic Forward “on” Voltage (0.5 µs after 50% decay point on dynamic forward voltage waveform) Forward Current: 30 A pulse Gate Pulse: at 200 mA, PW = 1 µs, tr = 20 ns VTM - 25 Volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116 |
类似零件编号 - 2N4200 |
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类似说明 - 2N4200 |
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