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SI4420DYPBF 数据表(PDF) 1 Page - International Rectifier

部件名 SI4420DYPBF
功能描述  HEXFETPower MOSFET
Download  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

SI4420DYPBF 数据表(HTML) 1 Page - International Rectifier

  SI4420DYPBF Datasheet HTML 1Page - International Rectifier SI4420DYPBF Datasheet HTML 2Page - International Rectifier SI4420DYPBF Datasheet HTML 3Page - International Rectifier SI4420DYPBF Datasheet HTML 4Page - International Rectifier SI4420DYPBF Datasheet HTML 5Page - International Rectifier SI4420DYPBF Datasheet HTML 6Page - International Rectifier SI4420DYPBF Datasheet HTML 7Page - International Rectifier SI4420DYPBF Datasheet HTML 8Page - International Rectifier  
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Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
±12.5
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
±10
A
IDM
Pulsed Drain Current

±50
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
0.02
W/°C
EAS
Single Pulse Avalanche Energy
„
400
mJ
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
8/11/04
Si4420DYPbF
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
This N-channel HEXFET® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
VDSS = 30V
RDS(on) = 0.009Ω
Description
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Absolute Maximum Ratings
W
www.irf.com
1
PD - 95729
SO-8


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