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IRLH5030TRPBF 数据表(PDF) 6 Page - International Rectifier |
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IRLH5030TRPBF 数据表(HTML) 6 Page - International Rectifier |
6 / 8 page IRLH5030PbF www.irf.com © 2013 International Rectifier May 29, 2013 6 Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms V GS V DS 90% 10% t d(on) t d(off) t r t f VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 RD VGS RG D.U.T. 10V + -VDD VGS CircuitLayoutConsiderations • Low Stray Inductance • Ground Plane • LowLeakageInductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T 1K VCC DUT 0 L s$$Ã |
类似零件编号 - IRLH5030TRPBF |
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类似说明 - IRLH5030TRPBF |
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