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IRF6662TRPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF6662TRPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 08/25/06 IRF6662PbF IRF6662TRPbF DirectFET™ Power MOSFET DirectFET™ ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A. Notes: SQ SX ST MQ MX MT MZ Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A 39 Max. 6.6 47 66 ±20 100 8.3 4.9 Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 20 40 60 80 100 ID = 4.9A TJ = 25°C TJ = 125°C 0 5 10 15 20 25 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 80V VDS= 50V VDS= 20V ID= 4.9A RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Description The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. D G S S D VDSS VGS 100V max ±20V max RDS(on) 17.5m Ω@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 22nC 6.8nC 1.2nC 50nC 11nC 3.9V PD - 97243A |
类似零件编号 - IRF6662TRPBF |
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类似说明 - IRF6662TRPBF |
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