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IRF6609TRPBF 数据表(PDF) 2 Page - International Rectifier |
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IRF6609TRPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF6609PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.6 2.0 m Ω ––– 2.0 2.6 VGS(th) Gate Threshold Voltage 1.55 ––– 2.45 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 91 ––– ––– S Qg Total Gate Charge ––– 46 69 Qgs1 Pre-Vth Gate-to-Source Charge ––– 15 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.7 ––– nC Qgd Gate-to-Drain Charge ––– 15 ––– Qgodr Gate Charge Overdrive ––– 11 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 20 ––– Qoss Output Charge ––– 26 ––– nC td(on) Turn-On Delay Time ––– 24 ––– tr Rise Time ––– 95 ––– td(off) Turn-Off Delay Time ––– 26 ––– ns tf Fall Time ––– 9.8 ––– Ciss Input Capacitance ––– 6290 ––– Coss Output Capacitance ––– 1850 ––– pF Crss Reverse Transfer Capacitance ––– 860 ––– Avalanche Characteristics Parameter Units EAS (Thermally limited) Single Pulse Avalanche Energy f mJ IAR Avalanche Current Ãe A EAR Repetitive Avalanche Energy e mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 89 (Body Diode) A ISM Pulsed Source Current ––– ––– 250 (Body Diode) Ãe VSD Diode Forward Voltage ––– 0.80 1.2 V trr Reverse Recovery Time ––– 32 48 ns Qrr Reverse Recovery Charge ––– 26 39 nC MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 25A Conditions ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V Ãg VDS = 10V VDS = 16V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V VGS = 4.5V VGS = 4.5V, ID = 25A g VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A g TJ = 25°C, IF = 25A di/dt = 100A/µs g TJ = 25°C, IS = 25A, VGS = 0V g showing the integral reverse p-n junction diode. ID = 17A VGS = 0V VDS = 10V ID = 25A See Fig. 12, 13, 18a, 18b, ––– Typ. ––– ––– 240 Max. |
类似零件编号 - IRF6609TRPBF |
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