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3N165 数据表(PDF) 2 Page - Calogic, LLC |
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3N165 数据表(HTML) 2 Page - Calogic, LLC |
2 / 2 page ELECTRICAL CHARACTERISTICS (Continued) (TA = 25 oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS gfs Forward Transconductance 1500 3000 µSVDS = -15V, ID = -10mA, f = 1kHz gos Output Admittance 300 Ciss Input Capacitance 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz (Note 4) Crss Reverse Transfer Capacitance 0.7 Coss Output Capacitance 3.0 RE(Yfs) Common Source Forward Transconductance 1200 µs VDS = -15V, ID = -10mA, f = 100MHz (Note 4) 3N165 / 3N166 CORPORATION MATCHING CHARACTERISTICS 3N165 SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS Yfs1 / Yfs2 Forward Transconductance Ratio 0.90 1.0 VDS = -15V, ID = -500 µA, f = 1kHz VGS1-2 Gate Source Threshold Voltage Differential 100 mV VDS = -15V, ID = -500 µA ∆VGS1−2 ∆T Gate Source Threshold Voltage Differential Change with Temperature 100 µV/oC VDS = -15V, IA = -500 µA TA = -55 oC to +25oC NOTES: 1. See handling precautions on 3N170 data sheet. 2. Per transistor. 3. Devices must not be tested at ±125V more than once, nor longer than 300ms. 4. For design reference only, not 100% tested. |
类似零件编号 - 3N165 |
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类似说明 - 3N165 |
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