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FM25W256-G 数据表(PDF) 10 Page - Cypress Semiconductor |
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FM25W256-G 数据表(HTML) 10 Page - Cypress Semiconductor |
10 / 16 page FM25W256 - 256Kb SPI F-RAM Document Number: 001-84506 Rev. *B Page 10 of 16 AC Parameters (TA = -40 C to + 85 C, VDD = 2.7V to 5.5V, CL = 30pF) Symbol Parameter Min Max Units Notes fCK SCK Clock Frequency 0 20 MHz tCH Clock High Time 22 ns 1 tCL Clock Low Time 22 ns 1 tCSU Chip Select Setup 10 ns tCSH Chip Select Hold 10 ns tOD Output Disable Time 20 ns 2 tODV Output Data Valid Time 20 ns tOH Output Hold Time 0 ns tD Deselect Time 60 ns tR Data In Rise Time 50 ns 2,3 tF Data In Fall Time 50 ns 2,3 tSU Data Setup Time 5 ns tH Data Hold Time 5 ns tHS /Hold Setup Time 10 ns tHH /Hold Hold Time 10 ns tHZ /Hold Low to Hi-Z 25 ns 2 tLZ /Hold High to Data Active 20 ns 2 Notes 1. tCH + tCL = 1/fCK. 2. This parameter is characterized but not 100% tested. 3. Rise and fall times measured between 10% and 90% of waveform. Capacitance (TA = 25 C, f=1.0 MHz, VDD = 5.0V) Symbol Parameter Min Max Units Notes CO Output Capacitance (SO) - 8 pF 1 CI Input Capacitance - 6 pF 1 Notes 1. This parameter is characterized and not 100% tested. AC Test Conditions Input Pulse Levels 10% and 90% of VDD Input rise and fall times 5 ns Input and output timing levels 0.5 VDD Output Load Capacitance 30 pF Data Retention Symbol Parameter Min Max Units Notes TDR @ +85ºC 10 - Years @ +80ºC 19 - Years @ +75ºC 38 - Years |
类似零件编号 - FM25W256-G |
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类似说明 - FM25W256-G |
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