SI7450DP-T1-E3 datasheet(1/7 Pages) VISHAY

部件名	SI7450DP-T1-E3

功能描述	N-Channel 200 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7450DP

Document Number: 71432

S13-0300-Rev. F, 11-Feb-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 200 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFETs

•

New Low Thermal Resistance PowerPAK®

Package with Low 1.07 mm Profile

•

PWM Optimized for Fast Switching

•

100 % Rg Tested

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Primary Side Switch for High

Density DC/DC

•

Telecom/Server 48 V DC/DC

•

Industrial and 42 V Automotive

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See solder profile (

www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

200

0.080 at VGS = 10 V

5.3

0.090 at VGS = 6 V

5

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

Ordering Information

:

Si7450DP-T1-E3 (Lead (Pb)-free)

Si7450DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150°C)

a

TA = 25 °C

ID

5.3

3.2

A

TA = 70 °C

4.3

2.6

TC = 25 °C

19.8

TC = 70 °C

15.9

Pulsed Drain Current

IDM

40

Avalanche Current

IAS

15

Continuous Source Current (Diode Conduction)a

IS

4.3

1.6

Maximum Power Dissipationa

TA = 25 °C

PD

5.2

1.9

W

TA = 70 °C

3.3

1.2

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 s

RthJA

19

24

°C/W

Steady State

52

65

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.5

1.8

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