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SI4909DY-T1-GE3 数据表(PDF) 5 Page - Vishay Siliconix |
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SI4909DY-T1-GE3 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 67077 S10-2603-Rev. A, 15-Nov-10 www.vishay.com 5 Vishay Siliconix Si4909DY New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 10 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
类似零件编号 - SI4909DY-T1-GE3 |
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类似说明 - SI4909DY-T1-GE3 |
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