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PZTA14T1 数据表(PDF) 2 Page - Motorola, Inc |
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PZTA14T1 数据表(HTML) 2 Page - Motorola, Inc |
2 / 6 page PZTA14T1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 30 — — Vdc Collector-Emitter Breakdown Voltage (IC = 100 µAdc, IB = 0) V(BR)CES 30 — — Vdc Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 10 — — Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO — — 0.1 µAdc Emitter-Base Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO — — 0.1 µAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 — — — — — Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — — 1.5 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) — — 2.0 Vdc DYNAMIC CHARACTERISTICS Current-Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) fT 125 — — MHz 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. |
类似零件编号 - PZTA14T1 |
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类似说明 - PZTA14T1 |
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