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TSG40N120 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSG40N120 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 10 page  TSG40N120CE N-Channel IGBT with FRD. 2/10 Version: B12 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case IGBT RӨJC 0.6 oC/W DIODE 2.2 Thermal Resistance - Junction to Ambient RӨJA 25 Electrical Specifications (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA BVCES 1200 -- -- V Zero Gate Voltage Collector Current VCE = 1200V, VGE = 0V ICES -- -- 1 mA Gate-Emitter Leakage Current VGE = 20V, VCE = 0V IGES -- -- ±250 nA Gate-Emitter Threshold Voltage VGE = VCE, IC = 40mA VGE(TH) 4.0 6.0 8.0 V Collector-Emitter Saturation Voltage VGE = 15V,IC =40A, TJ=25ºC VCE(SAT) -- 2 2.8 V VGE = 15V,IC =40A, TJ=125ºC VCE(SAT) -- 2.5 -- V Dynamic Input Capacitance VCE = 30V, VGE = 0V, f = 1.0MHz CIES -- 5150 -- pF Output Capacitance COES -- 150 -- Reverse Transfer Capacitance CRES -- 100 -- Switching Turn-On Delay Time VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V Inductive Load, TJ=25 oC td(on) -- 41 -- nS Rise Time tr -- 82 -- Turn-Off Delay Time td(off) -- 200 -- Fall Time tf -- 85 170 Turn-On Switching Loss Eon -- 5.8 8.7 mJ Turn-Off Switching Loss Eoff -- 1.5 2.3 Total Switching Loss Ets -- 7.3 11 Turn-On Delay Time VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V Inductive Load, TJ=125 oC td(on) -- 45 -- nS Rise Time tr -- 76 -- Turn-Off Delay Time td(off) -- 212 -- Fall Time tf -- 189 -- Turn-On Switching Loss Eon -- 5.6 5 mJ Turn-Off Switching Loss Eoff -- 3.3 5 Total Switching Loss Ets -- 8.9 13.4 Total Gate Charge VCC = 600V, IC = 40A, VGE = 15V Qg -- 210 315 nC Gate-Emitter Charge Qge -- 50 75 Gate-Collector Charge Qgc -- 115 173 |
类似零件编号 - TSG40N120 |
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类似说明 - TSG40N120 |
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