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BC635 数据表(PDF) 1 Page - NXP Semiconductors |
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BC635 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description NPN medium power transistor series. [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I Linear voltage regulators I Low side switches I MOSFET drivers I Amplifiers 1.4 Quick reference data BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistors Rev. 07 — 4 June 2007 Product data sheet Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC635[2] SOT54 SC-43A TO-92 BC636 BCP54 SOT223 SC-73 - BCP51 BCX54 SOT89 SC-62 TO-243 BCX51 Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 45 V IC collector current - - 1 A ICM peak collector current single pulse; tp ≤ 1 ms - - 1.5 A hFE DC current gain VCE =2V; IC = 150 mA 63 - 250 hFE selection -10 VCE =2V; IC = 150 mA 63 - 160 hFE selection -16 VCE =2V; IC = 150 mA 100 - 250 |
类似零件编号 - BC635 |
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类似说明 - BC635 |
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