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BAW56W 数据表(PDF) 1 Page - NXP Semiconductors |
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BAW56W 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. 1.2 Features 1.3 Applications I High-speed switching I General-purpose switching 1.4 Quick reference data [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAV756S; BAW56 series High-speed switching diodes Rev. 05 — 26 November 2007 Product data sheet Table 1. Product overview Type number Package Package configuration Configuration NXP JEITA JEDEC BAV756S SOT363 SC-88 - very small quadruple common anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode I High switching speed: trr ≤ 4ns I Low capacitance: Cd ≤ 2pF I Low leakage current I Reverse voltage: VR ≤ 90 V I Small SMD plastic packages Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IR reverse current VR = 80 V - - 0.5 µA VR reverse voltage - - 90 V trr reverse recovery time [1] --4 ns |
类似零件编号 - BAW56W |
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类似说明 - BAW56W |
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