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BAW56W 数据表(PDF) 7 Page - NXP Semiconductors |
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BAW56W 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 15 page BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 7 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 8. Test information (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 k Ω 450 Ω D.U.T. mga882 VFR t output signal V |
类似零件编号 - BAW56W |
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类似说明 - BAW56W |
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