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BAW56W 数据表(PDF) 5 Page - NXP Semiconductors |
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BAW56W 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 15 page BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 5 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr =20ns. Rth(j-sp) thermal resistance from junction to solder point BAV756S - - 255 K/W BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W BAW56W - - 300 K/W Table 7. Thermal characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA --1 V IF = 150 mA - - 1.25 V IR reverse current VR = 25 V --30 nA VR = 80 V - - 0.5 µA VR =25V; Tj = 150 °C --30 µA VR =80V; Tj = 150 °C - - 150 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 2 pF trr reverse recovery time [2] --4 ns VFR forward recovery voltage [3] - - 1.75 V |
类似零件编号 - BAW56W |
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类似说明 - BAW56W |
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