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STF2N62K3 数据表(PDF) 1 Page - STMicroelectronics |
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STF2N62K3 数据表(HTML) 1 Page - STMicroelectronics |
1 / 25 page This is information on a product in full production. March 2012 Doc ID 018898 Rev 2 1/25 25 STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3™ Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID PTOT STB2N62K3 STD2N62K3 620 V < 3.6 Ω 2.2 A 45 W STF2N62K3 20 W STP2N62K3 STU2N62K3 45 W 3 2 1 1 2 3 DPAK IPAK TO-220 TO-220FP 1 3 TAB 1 2 3 TAB D²PAK 1 3 TAB D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STB2N62K3 STD2N62K3 2N62K3 D²PAK DPAK Tape and reel STF2N62K3 STP2N62K3 STU2N62K3 2N62K3 TO-220FP T0-220 IPAK Tube www.st.com |
类似零件编号 - STF2N62K3 |
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类似说明 - STF2N62K3 |
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