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STB15N80K5 数据表(PDF) 4 Page - STMicroelectronics |
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STB15N80K5 数据表(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 4/22 Doc ID 023468 Rev 2 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 1 mA 800 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 800 V VDS = 800 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 7 A 0.3 0.375 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS =100 V, f=1 MHz, VGS=0 - 1100 - pF Coss Output capacitance 85 pF Crss Reverse transfer capacitance 1.5 pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = 0 to 640 V -113 - pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -49 - pF RG Intrinsic gate resistance f = 1MHz, ID=0 - 4.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 640 V, ID = 14 A VGS =10 V (see Figure 20) - 32 6 22 - nC nC nC |
类似零件编号 - STB15N80K5 |
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类似说明 - STB15N80K5 |
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