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2SA1483 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SA1483
功能描述  High Frequency Amplifier Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SA1483 数据表(HTML) 2 Page - Toshiba Semiconductor

  2SA1483 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1483 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1483 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1483 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SA1483
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −45 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
hFE (1)
(Note 3)
VCE = −1 V, IC = −10 mA
40
240
DC current gain
hFE (2)
VCE = −3 V, IC = −200 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = −100 mA, IB = −10 mA
−0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = −100 mA, IB = −10 mA
−1.0
V
Transition frequency
fT
VCE = −10 V, IC = −10 mA
100
200
MHz
Input impedance (real part)
Re (hie)
VCE = −10 V, IE = 10 mA, f = 200 MHz
120
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
3.5
5
pF
Turn-on time
ton
40
Storage time
tstg
250
Switching time
Fall time
tf
30
ns
Note 3: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Marking
W
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
OUTPUT
680 Ω
VCC
= −12 V
VBB
= 3 V
INPUT
0
−10 V
1 μs
DUTY CYCLE ≤ 2%


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