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AM29F800BT-120DWE 数据表(PDF) 9 Page - Advanced Micro Devices

部件名 AM29F800BT-120DWE
功能描述  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F800BT-120DWE 数据表(HTML) 9 Page - Advanced Micro Devices

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5/4/98
Am29F800B Known Good Die
9
SU PP L E ME NT
REVISION SUMMARY FOR AM29F800B KGD
Revision A+1, A+2
Distinctive Characteristics
Changed typical program/erase time to 30 mA to match
the CMOS DC Characteristics table in the Am29F400B
full data sheet.
The minimum guarante per sector is now 1 million
cycles.
Pad Description
Corrected the following dimensions:
X (mils): pads 15, 18, 36
Y (mils): pads 10–12, 35, 36
X (mm): pads 2–22, 37, 38
Y (mm): pads 10–12, 23–32, 35, 36
Physical Specifications
Changed die thickness specification to ~20 mils.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.


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