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MTV32N20E 数据表(PDF) 6 Page - Motorola, Inc |
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MTV32N20E 数据表(HTML) 6 Page - Motorola, Inc |
6 / 10 page MTV32N20E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 25 50 75 100 125 150 t, TIME (s) Figure 13. Thermal Response Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 0 600 450 300 750 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 VGS = 20 V SINGLE PULSE TC = 25°C 1.0 1.0 10 100 0.1 dc 10 µs 1.0 ms 10 ms 1000 150 ID = 32 A 1.0 0.1 0.001 0.01 1.0E–02 1.0E–01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 R θJC(t) = r(t) RθJC R θJC = 0.7°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 D = 0.5 0.05 0.01 SINGLE PULSE 0.1 0.2 0.1 ms |
类似零件编号 - MTV32N20E |
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类似说明 - MTV32N20E |
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