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AM27C2048-70DE5B 数据表(PDF) 6 Page - Advanced Micro Devices

部件名 AM27C2048-70DE5B
功能描述  2 Megabit (128 K x 16-Bit) CMOS EPROM
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM27C2048-70DE5B 数据表(HTML) 6 Page - Advanced Micro Devices

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6
Am27C2048
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–16 = VIL.
4. See DC Programming Characteristics for VPP voltage during programming.
Mode
CE#
OE#
PGM#
A0
A9
VPP
Outputs
Read
VIL
VIL
XXX
X
DOUT
Output Disable
VIL
VIH
X
X
X
X
High Z
Standby (TTL)
VIH
X
X
X
X
X
High Z
Standby (CMOS)
VCC ± 0.3 V
X
X
X
X
X
High Z
Program
VIL
XVIL
XX
VPP
DIN
Program Verify
VIL
VIL
VIH
XX
VPP
DOUT
Program Inhibit
VIH
X
XXX
VPP
High Z
Autoselect
(Note 3)
Manufacturer Code
VIL
VIL
XVIL
VH
X01h
Device Code
VIL
VIL
XVIH
VH
X98h


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