MTV10N100E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

16

12

8

4

0

0

4

8

12

16

20

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

20

16

12

8

4

0

2.8

3.2

3.6

4

4.4

4.8

5.2

5.6

6

TJ = 25°C

VGS = 10 V

VDS ≥ 10 V

6 V

5 V

4 V

100

°C

25

°C

TJ = 55°C

1.48

1.4

1.32

1.24

1.16

1.08

1.0

0

4

8

12

16

20

ID, DRAIN CURRENT (AMPS)

15 V

2.4

2

1.6

1.2

0.8

0

0

4

8

12

16

20

25

°C

0.4

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

TJ = 100°C

–55

°C

TJ = 25°C

VGS = 10 V

100000

10000

1000

100

10

1

0

100

200

300

400

500

600

700

800

900 1000

100

°C

25

°C

2.8

2.4

2

1.6

1.2

0.8

0.4

0

– 50

– 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 5 A

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 125°C