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2SD1781KT146Q 数据表(PDF) 1 Page - Rohm |
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2SD1781KT146Q 数据表(HTML) 1 Page - Rohm |
1 / 4 page 2SD1781K Transistors Rev.A 1/3 Medium Power Transistor (32V, 0.8A) 2SD1781K Features 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) IC / IB= 500 A / 50mA 2) High current capacity in compact package. 3) Complements the 2SB1197K. Structure Epitaxial planar type NPN silicon transistor External dimensions (Unit : mm) 0~0.1 1.1 0.8 ±0.1 0.15 0.4 2.9 ±0.2 1.9 ±0.2 0.95 0.95 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2) (1) (3) (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : AF ∗ All terminals have same dimensions ∗ Denotes hFE Absolute maximum ratings (Ta=25 C) Parameter VCBO VCEO VEBO PC Tj Tstg 40 V V V A (DC) mW °C °C 32 5 0.8 A (Pulse) 1.5 ∗ IC ICP 200 150 −55 to +150 Symbol Limits Unit ∗ Single pulse Pw=100ms Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature |
类似零件编号 - 2SD1781KT146Q |
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类似说明 - 2SD1781KT146Q |
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