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STP10N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STP10N60M2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 24 page This is information on a product in full production. December 2013 DocID024710 Rev 2 1/24 24 STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Q g Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 , TAB TO-220 1 2 3 TAB 1 3 TAB DPAK 3 2 1 TAB IPAK 1 3 TAB D PAK 2 Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 650 V 0.600 Ω 7.5 A STD10N60M2 STP10N60M2 STU10N60M2 Table 1. Device summary Order codes Marking Package Packaging STB10N60M2 10N60M2 D 2 PAK Tape and reel STD10N60M2 DPAK STP10N60M2 TO-220 Tube STU10N60M2 IPAK www.st.com |
类似零件编号 - STP10N60M2 |
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类似说明 - STP10N60M2 |
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